BYQ28X-200_2
? NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 5 February 2009 3 of 10
NXP Semiconductors
BYQ28X-200
Dual ultrafast rugged rectifier diode
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
-200V
VRWM
crest working reverse
voltage
-200V
VR
reverse voltage DC - 200 V
IO(AV)
average output current SQW; δ
= 0.5; Th
≤
92 °C; both diodes conducting;
see Figure 1; see Figure 2
-10A
IFRM
repetitive peak forward
SQW; δ
= 0.5; tp
= 25 μs; Th
≤
92 °C; per diode - 10 A
current
IFSM
non-repetitive peak
forward current
tp
= 10 ms; SIN; Tj(init)
= 25 °C; per diode - 50 A
tp
= 8.3 ms; SIN; Tj(init)
= 25 °C; per diode - 55 A
IRRM
repetitive peak reverse
tp
=2μs; δ
= 0.001 - 0.2 A
current
IRSM
non-repetitive peak
reverse current
tp
= 100 μs - 0.2 A
Tstg
storage temperature -40 150 °C
Tj
junction temperature - 150 °C
Electrostatic discharge
VESD
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 k?; all pins - 8 kV
Fig 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
IF(AV)
(A)
08246
062
4
001aag976
4
2
6
8
Ptot
(W)
0
δ
= 1
0.2
0.1
0.5
001aag977
IF(AV)
(A)
2
4
6
Ptot
(W)
0
a = 1.57
2.2
2.8
4.0
1.9
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